| 摘要 |
PURPOSE:To realize a GaAsFET having low source resistance and high breakdown strength between a gate and a drain by making the thickness of an active layer between the gate and a source larger than that of the active layer between the gate and the drain. CONSTITUTION:In a GaAsFET consisting of a GaAs active layer 1, a source electrode 2, a gate electrode 3 and a drain electrode 4, the thickness a1 of the active layer between a gate and a source and the thickness a2 of the active layer between the gate and a drain are set to a1>a2. According to such constitution, the GaAsFET having low source resistance and high breakdown strength between the gate and the drain can be acquired.
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