| 摘要 |
PURPOSE:To operate the title transistor at high frequency by forming a hole to the upper section of a Schottky gate electrode. CONSTITUTION:A semiconductor layer 12 the same as a semiconductor layer 11 is grown on the semiconductor layer 11 having high impurity concentration and a semiconductor layer 13A having low impurity concentration is grown. Conductive layers 14 are formed. A semiconductor layer 13B, which consists of the same semiconductor material as the semiconductor layer 13A and has the same impurity concentration as the layer 13A, is grown, and approximately equilateral triangular holes 15 are formed on metallic stripes 14. A semiconductor layer 16, which is composed of the same conduction type as the second layer 12 and has approximately the same impurity concentration as the layer 12, is frown, and a source electrode 17 and a drain electrode 18 are shaped on each surface of the layer 11 and the layer 16. Capacitance between a gate and a drain can be reduced by the holes 15 on the conductor layers 14 for a Schottky gate, and high- frequency characteristics and high-speed switching characteristics are improved. |
