| 摘要 |
PURPOSE:To match impedances between input and output microwave lines and to improve electric separation between input and output by cascading a first grounded-gate field effect transistor FET and a second grounded-drain FET. CONSTITUTION:The first grounded-gate FET 2 which has the source electrode connected to an input microwave line 1 and the second grounded-drain FET 4 which has the gate electrode connected to the drain electrode of the first FET and has the source electrode connected to an output microwave line 5 are provided. Thus, the first grounded gate FET and the second grounded-drain FET are cascaded, and various characteristic impedances between input and output microwave lines are matched by these two cascaded FET circuits, and in this state, different microwave lines are connected.
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