| 摘要 |
PURPOSE:To improve the coverage of interconnection in a contact hole, by applying metal ions to side walls of the contact hole on which the interconnection layer is deposited in a smaller thickness, by means of the convergent ions beam technique. CONSTITUTION:An upper interconnection layer 3 is formed on a silicon substrate 1 through an interlayer insulation film 2 having a contact hole 5. The interconnection layer 3 has thin sections on the side walls of the contact hole 5; ion beam 4 is applied to these thin sections by means of the convergent ion beam technique so that the material of the interconnection layer is selectively deposited on the thin sections so as to increase the thickness thereof. In this manner, the coverage of interconnection in a contact hole can be improved.
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