发明名称 Photodetector
摘要 A photodetector comprising a light absorptive region, a wide bandgap region adjacent to the light absorptive region and a region of a first conductivity type extending through the wide bandgap region into the light absorptive region is improved by the incorporation of a lattice matched, intermediate bandgap region between the wide bandgap region and the light absorptive region. The p-n junction lies in the intermediate bandgap region in proximity to the interface thereof with the light absorptive region. The quantum efficiency of the disclosed device is significantly improved over prior art devices.
申请公布号 US4761680(A) 申请公布日期 1988.08.02
申请号 US19860912633 申请日期 1986.09.29
申请人 GENERAL ELECTRIC COMPANY 发明人 LONGEWAY, PAUL A.;MARTINELLI, RAMON U.
分类号 H01L31/105;H01L31/109;(IPC1-7):H01L27/14;H01L31/00 主分类号 H01L31/105
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