SINGLE CRYSTAL OF COMPOUND SEMICONDUCTOR OF GROUPS III-V WITH LOW DISLOCATION DENSITY

摘要

Novel single crystals of a compound semiconductor of groups III-V having low dislocation density are provided herein. At least one under-impurity and at least one over-impurity are doped in the host single crystal. From the concentrations " x1 " and " x2 ", and the replaced bond lengths " a1 " and " a2 " of the isoelectronic under- and over-impurities, an arithmetic average " a " of the bond lengths is calculated. The total concentrations of the isoelectronic impurities should be larger than 10 atoms/cm and the difference between " a " and "ao " should be less than plus or minus 2%. The size effects of the under- and over-impurities compensate each other in the double-impurity-doped crystal of the present invention.