发明名称 Shutter device for ion beam etching apparatus and such etching apparatus using same
摘要 A shutter device for use in an etching apparatus using charged particles, which includes at least one sheet-like electrode having an aperture for passage of the charged particles; and a voltage source for selectively applying to the electrode an electric voltage so as to establish at the electrode an electric potential higher than that of the charged particles; wherein the passage of the charged particles through the aperture of said electrode is prevented when the electric potential which is higher than that of the charged particles is established at the electrode by the voltage application by the voltage source.
申请公布号 US4761199(A) 申请公布日期 1988.08.02
申请号 US19860849443 申请日期 1986.04.08
申请人 CANON KABUSHIKI KAISHA 发明人 SATO, YASUE
分类号 H01J37/04;H01J37/30;(IPC1-7):C23F1/02 主分类号 H01J37/04
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