| 摘要 |
PURPOSE:To obtain a conductivity modulation type MOSFET which can properly suppress the operation of a parasitic bi-polar transistor to improve the secondary breakdown resistance and can improve the manufacturing yield by providing a source electrode connected to a body region and a source region through a silicide layer formed in the body region. CONSTITUTION:A body region 3 of a second conductivity type is formed on the surface side of a base region 2 of a first conductivity type which effectively acts as a drain, and a source region 4 of the first conductivity type is formed on the surface side of the body region 3. And on the body region 3 between the source region 4 and said base region 2, a gate electrode 7 inducing a channel 5 in the body region 3 is provided through a gate insulating film 6. Further, through a silicide layer 8 formed in said body region 3 and becoming a conductor, a source electrode 12 connected to the body region and the source region 4 is provided. For instance, on an Si wafer becoming a P<+> anode region 1, said respective regions are formed wherein the first conductivity type is an N-type, and an anode electrode 13 is further provided, constructing a conductivity modulation type vertical MOSFET.
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