| 摘要 |
PURPOSE:To enable impurity gas to be sufficiently removed by heating in the vacuum or refined gas in a susceptor by a method wherein a gas discharging part partially not covered with a fine film is provided to remove the impurity gas contained in an exoergic holder. CONSTITUTION:A wafer susceptor with a partial surface of exoergic holder 1 made of carbon sintered body covered with an SiC thin film 2 is provided with a gas discharged part 3 not covered with the SiC thin film 2 while wafers 4 are mounted on the surface of susceptor. It is recommended that the gas discharging parts 3 of susceptor is positioned downstream of gas flow from the wafer holder holding wafers during filming process. In such a constitution, when the susceptor is contained in the vacuum chamber of a vacuum exhaust system (340l/s) to measure the transition of vacuum degree corresponding to the discharged gas when the vacuum chamber is externally heated by a heater, it is evident that the susceptor can be degassed efficiently by heating in vacuum state if the wafer susceptor is provided with the gas discharging part 3. |
