| 摘要 |
PURPOSE:To manufacture with an excellent yield a semiconductor device wherein the grounding inductance is small and the thermal resistance is restricted, by a method wherein a noble metal layer is spread on the sidewall of a trench to isolate each element and on an insulator layer, the thickness of a semiconductor substrate is decreased from the rear to expose the noble metal layer, its surface is coated with heat dissipation material, and each element is isolated by applying a separation trench. CONSTITUTION:An operating layer 2 is formed by introducing impurity from the surface of a semiconductor substrate 1 toward the inside, and an electrode is formed by coating a specified position of an insulator layer 3 covering the operating layer 2 with a conductive thin film. In the vicinity of the above surface, a trench 7 isolating each of a plurality of elements having a plurality of electrodes is formed, and a noble metal layer 8 is spread on the surface of the insulator layer 3 containing the side surface constituting the trench 7. From the opposite surface of the above semiconductor substrate 1, its thickness is decreased and the above noble metal layer 8 is exposed. After the exposed surface is coated with a heat dissipation material 15, each element is isolated by applying the above isolation trench 7. For example, from the surface of a GaAs semiconductor substrate Si ion is implanted to form the operating layer 2, and a plurality of semiconductor elements are formed. Then the isolation trench 7 is formed, and a gold coating 8 and a gold-plated layer 10 are arranged.
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