| 摘要 |
PURPOSE:To enhance the traveling property of a carrier by alternately laminating thin fine-crystalline Si films, thin amorphous Si films and thin amorphous Si films contg. >=1 kinds among C, O, and N, thereby constituting a barrier layer. CONSTITUTION:The barrier layer 2 having the superlattice structure alternately laminated with the thin fine-crystalline Si (muc-Si) films, thin amorphous Si (a-Si) films and the thin amorphous Si (e.g.: a-SiC) films contg. >=1 kinds among C, O and N is formed on a conductive base 1. The thicknesses of the respective above-mentioned thin films are preferably 30-500Angstrom . The layer 2 is preferably made into a p- or n-type by doping a group III element (e.g.: B) or group V element (e.g.: P) of periodic table into the above-mentioned a-Si films and muc-Si films according to the kind of the electric charge to be charged on the surface of the photosensitive body. A photoconductive layer (e.g.: a-Si:H layer) 3 and a surface layer (e.g.: a-SiC:H layer) 4 are laminated on the layer 2. |
