| 发明名称 |
Method of manufacturing avalanche photo diode |
| 摘要 |
An avalanche photo diode in which the guard ring portion and the front of the pn junction of the light receiving portion are formed at the same depth from the surface of an InP layer, so that the guard ring performs its desired function.
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| 申请公布号 |
US4761383(A) |
申请公布日期 |
1988.08.02 |
| 申请号 |
US19870047606 |
申请日期 |
1987.04.30 |
| 申请人 |
KOKUSAI DENSHIN DENWA KABUSHIKI KAISHA |
发明人 |
MATSUSHIMA, YUICHI;SAKAI, KAZUO;AKIBA, SHIGEYUKI |
| 分类号 |
H01L31/107;H01L31/18;(IPC1-7):H01L31/18 |
主分类号 |
H01L31/107 |
| 代理机构 |
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