| 摘要 |
PURPOSE:To make it possible to form an epitaxial layer having clear boundary of epitaxial layer made on a wafer by change of gas and excellent facial uniformity, by setting both a specific gas flow changing means and a partition plate in a vapor epitaxial growth reaction tube. CONSTITUTION:A substrate 8 is set in a vapor epitaxial growth reaction tube 2 and raw material gases 3 and 9 are supplied to grow an epitaxial layer on the substrate 8. In the reaction tube 2 are set the following gas flow changing means 6 and partition plate 5. Namely, the partition plate 5 is horizontally set from a position in the upper stream of the substrate 8 arranged in the reaction tube 2 to a position in the downstream of the substrate 8 and divides the reaction tube 2. The gas flow changing means 6 is arranged at the tip part of the upper stream side of the partition plate 5 and can change the ratio of a raw material gas flowing at the side of the substrate 8 at a section in the direction perpendicular to the longer direction of the reaction tube 2 at the position of the gas flow changing means 6.
|
