| 摘要 |
PURPOSE:To simply obtain a highly resistant CdTe crystal without using a special apparatus, by adding an impurity In of specific amount or below to the crystal when Cd and Te are charged into an ampul for crystal growth, heated and cooled to grow the CdTe single crystal. CONSTITUTION:Cd and Te are charged into an ampul for crystal growth so that an atomic ratio of Cd/Te is 0.998-1.002 and an impurity In is added to the crystal so that the impurity concentration is <=1ppm. Then the ampul is discharged to vacuum and sealed and a CdTe single crystal is grown by vertical Bridgeman method, etc. Highly resistant CdTe single crystal having Cd/Te atomic ratio of <1 and containing <=0.7ppm In is obtained thereby. The function of a device such as a radiation detector, Pockels cell, etc., can be improved by using the resultant highly resistant CdTe single crystal.
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