| 摘要 |
PURPOSE:To alleviate an abrupt temperature distribution, to prevent defects and to obtain titled crystal layer for device having SOI structure, by arranging a reflection preventing film, etc., in a specific stripe state in the laser beam scanning direction on a semiconductor layer on an insulating material substrate and irradiating the semiconductor layer with laser beam. CONSTITUTION:A SiO2 layer 2 is formed on an insulating material substrate (e.g. Si substrate) 1 and a semiconductor layer 3 of polycrystalline Si film, etc., is made. Then (A) a reflecting preventing film 4 is arranged in the laser beam scanning direction on the semiconductor layer 3 in such a way that the centers of stripes are positioned at equal intervals, widths of the strips successively enlarge in the x and -x directions at each point when a point at x=0 is regarded as the center and three or more stripes are set or (B) three or more stripes are set by changing thickness of the reflection preventing film, reflection increasing film or reflecting film. The semiconductor layer is irradiated with laser beam 6 in Gaussian or truncated state. Zones under stripes 4 and 8 of the reflection preventing film, etc., are made at higher temperature than zones with no stripes, namely temperature is distributed at high temperature at the peripheral part and at low temperature at the central part and semiconductor single crystal is recrystallized and formed.
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