发明名称 SILICON SUBSTRATE CONTAINING MIXED METAL
摘要 PURPOSE:To obtain a silicon substrate containing a mixed metal, consisting of a single crystal silicon containing the metal and having excellent mechanical strength, toughness and fatigue strength. CONSTITUTION:A metal 2 selected from beryllium copper, phosphor bronze, Al, Ti, Mg, Pb, Cr and Mo is evaporated or deposited on a face applying heat diffusion of a single crystal silicon substrate 1 and heated at 700-1,500 deg.C to heat-diffuse the metal 2 into the substrate 1.
申请公布号 JPS63185895(A) 申请公布日期 1988.08.01
申请号 JP19870015250 申请日期 1987.01.27
申请人 NIPPON TELEGR & TELEPH CORP <NTT> 发明人 SAKANO SUSUMU;DOI TOSHIRO
分类号 C30B29/06;C30B31/02;H01L29/84 主分类号 C30B29/06
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