发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 PURPOSE:To prevent a bit of information of a flip-flop from being broken down due to an incidence of alpha rays without adding a capacity to a collector node, and to operate the titled circuit at high speed by using in the reverse direction a transistor whose collector is connected to the fetching point of a signal for the feedback of the flip-flop. CONSTITUTION:Among transistors for constituting a flip-flop, a reverse direction transistor is used for Q1, Q2, Q3 and Q4. Their collectors (usual emitters) are connected to the fetching point 11 of a feedback signal, and accordingly, even if a noise charge is collected in n<+>BL (emitters) of these transistors, its influence does not appear in the feedback signal, therefore, the inversion of information is not generated. Also, when the transistor of a side wall base electrode structure as shown in the figure is used as the transistor, an excellent reverse direction characteristic is obtained, therefore, the increase of a delay time can be prevented.
申请公布号 JPS63185215(A) 申请公布日期 1988.07.30
申请号 JP19870016071 申请日期 1987.01.28
申请人 HITACHI LTD 发明人 HONMA NORIYUKI;NAKAMURA TORU;OGIUE KATSUMI;YAMAGUCHI KUNIHIKO
分类号 H01L29/73;H01L21/331;H01L21/8229;H01L27/06;H01L27/10;H01L27/102;H01L29/72;H03K3/286;H03K19/003;H03K19/086 主分类号 H01L29/73
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