发明名称 SEMICONDUCTOR MEMORY
摘要 PURPOSE:To reduce the power consumption for the read mode by outputting data from a sense amplifier in the read mode and using this output to set the sense amplifier to the inactive state. CONSTITUTION:A current mirror type sense amplifying part is provided which detects and amplifies the difference between potentials of a pair of bit lines provided in a static random access memory. That is, a sense amplifier SA and a switching N-channel MOS transistor (TR) N3 are connected in series between the power supply node of a high-potential supply voltage VDD and that of a low-potential supply voltage VSS. After data is outputted from the sense amplifier SA in the read mode, this output is used to suppress the through current of the sense amplifier SA. Thus, the power consumption in the read mode is reduced.
申请公布号 JPS63184990(A) 申请公布日期 1988.07.30
申请号 JP19870015961 申请日期 1987.01.28
申请人 TOSHIBA CORP;TOSHIBA MICRO COMPUT ENG CORP 发明人 ISOBE MITSUO;AONO AKIRA
分类号 G11C11/409;G11C11/34;G11C11/407 主分类号 G11C11/409
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