| 摘要 |
PURPOSE:To form a semiconductor thin film having large crystal grain size determined by a predetermined interval at which boron ions are locally introduced to an amorphous semiconductor thin film, semiconductor crystal grains including no irregularity and preferable crystallinity by introducing the boron ions and then heat-treating it. CONSTITUTION:Silicon ions Si<+> are implanted, for example, under the conditions of 5X10<15> pieces/cm<2> and 40keV to a polycrystalline silicon thin film 5 to form an amorphous silicon thin film 2. After the film 2 is then covered with a resist 6, openings 7...7 of planar square shape having, for example, 0.5mum of one side are formed at intervals of 10mum in a matrix on the resist 6, boron fluoride ions BF2<+> are implanted, for example, under the conditions of 3X10<15> pieces/cm<2> and 15keV to the film 2 through the openings 7...7 of the resist 6 to form local regions 8...8 containing the ions BF2<+> on the front surface of the film 2. Thereafter, it is heat treated.
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