| 摘要 |
PURPOSE:To prevent the yield of contamination due to attachment of foreign material on the surface of a substrate and the yield of abnormality in a growing layer, by annealing a silicon substrate in mixed gas of hydrogen and carbon dioxide gas. CONSTITUTION:Temperature is increased in N2 gas, and the N2 gas is replaced by H2 gas at, e.g., 400 deg.C. Thereafter, the temperature is increased to 1,150 deg.C. This temperature is kept for five minutes, and hydrogen flushing is performed. Then, the temperature is decreased to a growth temperature of, e.g., 925 deg.C. At this temperature, annealing is performed in mixed gas of 20l/min of H2 gas and 5cc/min of CO2 gas (volume ratio:0.025%). Thereafter, the mixed gas is replaced by H2 gas, and a magnesia spinel is grown. When the growth is finished, the H2 gas is replaced by N2 gas, and the temperature is decreased. A magnesia spinel layer with a thickness of 1mum at a face index (100) is grown on an Si substrate having a face index (100). The growth conditions are as follows: growth temperature is 925 deg.C; and growth speed is 220 Angstrom /min.
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