| 摘要 |
PURPOSE:To cause a large amount of gas particles to collide with a substrate at a high speed, form a dense thin film on the substrate and improve its adhesion and film forming rate by providing an electrode to generate electric field for accelerating plasma gas particles toward the substrate. CONSTITUTION:High speed gas particles in the direction of arrow mark B indicating the flow to the substrate among the gas particle flow directions A and B indicated by the arrow mark increase by application of an electric field across an electrode 8, which is provided opposite to a substrate 1 and heater 2 and is arranged so as to interpose the material gas G1 and second gas G2 supplied from the supply parts 4, 6 with the substrate 1 and the heater 2. Namely, the electric field works on the ionized gas and particles are accelerated to a high speed. In the case of forming a thin film of silicon nitride, N2 is used as the second gas G2, but when a silicon oxide film is to be formed, N2O gas is used in place of N2 gas. When an amorphous silicon is to be formed, Ar gas is used in place of N2 gas, respectively in the similar processings.
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