| 摘要 |
PURPOSE:To enable dusts generated during a marking process to be almost perfectly removed, by a method wherein, a protective film is formed all or partially over one main surface of a semiconductor substrate, and the protective film is removed after the marking is carried out by a laser on a part of the portion covered with the protective layer. CONSTITUTION:A semiconductor substrate 1 consists of semiconductive materials such as Si and GaAs. A photoresist 2 on the main surface of the substrate 1, which is the same as used in the manufacture of a semiconductor integrated circuit, is formed to be approximately 1mum thick. A marking portion 3 is formed by a laser marking, but due to the heat generated at this time a part of the semiconductor substrate 1 and the photoresist 2 is splashed thereabouts to become dusts 4. After that, the photoresist 2 is removed with an organic releaser, and simultaneously the dusts 4 are removed. In addition, the photoresist is used as a protective film, but an organic material of polyimide etc., may be alternatively used. A material provided with an oxide, a nitride, a polysilicon, a metal, or the like formed on a semiconductor substrate may be used as an object. |
