| 摘要 |
PURPOSE:To reduce the dislocation density on the surface of compound semiconductor such as of a GaAs layer or an InP layer and allows growth of high quality compound semiconductor on a low cost Si substrate, by providing an intermediate layer of compound semiconductor comprising material other than ZnSe between a single-crystal compound semiconductor layer and an Si substrate. CONSTITUTION:An intermediate layer 2 of compound semiconductor provided between a single-crystal compound semiconductor layer 3 and an Si substrate 1 is constituted by a substance having the maximum coupling energy between the atoms (or ions) forming such an intermediate layer is smaller than the maximum bonding energy between the atoms (or ions) forming the single-crystal compound semiconductor layer. For example, in the case where the single-crystal compound semiconductor layer in formed of GaAs, it is preferable to form the intermediate layer of any of GaSb, InAs, InSb, ZnS, ZnTe, CdS, CdSe and CdTe, and in the case where the single-crystal compound semiconductor is formed of InP, it is preferable to form the intermediate layer of any of GaAs, AlSb, GaP, GaSb, InAs, InSb, ZnS, ZnTe, CdS, CdSe and CdTe.
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