| 摘要 |
PURPOSE:To prevent generation of particles on the film formed on a surface of a substrate by running parallel a reactive gas on the surface of a substrate and running gaseous N2 of the same temp. in parallel with the reactive gas in the upper part of the reactive gas flow in a vapor reaction device. CONSTITUTION:A wafer 22 is imposed on a hot plate 20 and is heated up to a reaction temp. The SiH4-O2 or SiH4-PH3-O2 reactive gas is preliminarily heated up to about the reaction temp. by a heating coil 34 in a gas supply pipe 32 and is ejected from the many small holes 28 of a reactive gas supply nozzle 24 provided in the upper part thereof so as to flow in a belt shape along the surface of the wafer 22, thereby forming an SiO2 film or PSG film on the wafer 22 surface. The preheated gaseous N2 is ejected from a nozzle 28 above the reactive gas flow so as to flow in parallel with the reactive gas. The resultant product of reaction formed in the reactive gas is drifted by the parallel gaseous flow without falling onto the wafer 22 and without generating particles. A reaction chamber is not always required as there is the gaseous N2 and the vapor reaction device is simplified. |
