| 摘要 |
PURPOSE:To contrive to eliminate deterioration of landing location of an electron beam by applying a deflection voltage signal via a capacitor and applying intermittently a bias by switching means. CONSTITUTION:A couple if horizontal deflection voltages 66a, 66b are applied from one terminal of capacitors 61a, 61c, 61e and one end of 61b, 61d, 61f and a couple of switching pulses 67a, 67b are applied from one terminal of capacitors 64a, 64c, 64d and one terminal of 64b, 64d, 64f. The period and the relation of phase of horizontal deflection voltage signals 66a, 66b and switching pulses 67a, 67b are made coincident, then the circuit formed by a capacitor 61 and a FET 63 acts like a clamp circuit and the level is fixed to a voltage of power supply 62 to be applied a horizontal deflection voltage signal and a bias voltage. |
