| 摘要 |
PURPOSE:To prevent a temperature drop during development treatment by mounting a mechanism in which a substrate to be developed is irradiated with infrared rays. CONSTITUTION:A chuck 21 turning a substrate 31 is set up to the lower section of a developing chamber 11 and a developing nozzle and a rinsing nozzle 51 to the upper sections of the chuck 21 respectively, and an infrared irradiation lamp 71 irradiating the substrate 31 in the chamber 11 with infrared rays is further fitted. A resist layer 41 is developed by discharging a development treating liquid 51 in a spray manner so as to cover the desired area of the substrate to be treated by the nozzle 51. Infrared rays continue to be applied in order to heat the substrate to be treated from the infrared irradiation lamp 71 during the development treatment. Accordingly, the substrate 31 to be treated is robbed of the heat of vaporization, and development treatment is promoted without a temperature drop. |
