| 摘要 |
PURPOSE:To correct pattern displacement generated on the joint section of partial exposure on a body to be exposed by arranging an alignment mark for baking a partial exposure region to be baked subsequently into a baking pattern in a partial exposure region and mounting an alignment system detecting the alignment mark. CONSTITUTION:A first quadrant mask 2 is set to a mask stage, and a large-sized substrate 1 is moved to a first quadrant exposure position. The mask 2 is irradiated with ultraviolet beams under the state, and the pattern of the first quadrant mask 2 is transferred to the first quadrant of the large-sized substrate 1. A second quadrant alignment mark 6 is also transferred simultaneously at that time. The first quadrant mask 2 is replaced with a second quadrant mask 3, and the second quadrant of the large-sized substrate 1 is brought to the position of exposure. The second quadrant alignment mark 6 on the substrate 1 baked at the time of first quadrant exposure and an alignment mark 6 written in the second quadrant mask are detected by employing an auto-alignment detection system 9 at that time, and the position of exposure is aligned. The mask 3 is irradiated with ultraviolet beams after positioning, and the pattern of the second quadrant mask 3 is transferred to the second quadrant of the large sized substrate 1. A third quadrant alignment mark 7 is also transferred simultaneously at that time. |
