发明名称 SEMICONDUCTOR STORAGE DEVICE
摘要 PURPOSE:To set information to other arbitrary line by setting the same initial line information to not only a storage cell string block containing a selective word line but also a bit line of all blocks at the time of setting the initial line information. CONSTITUTION:While WE is 'L' at a CAS-before RAS time, initial line information is written in a selective word line corresponding to a column address RA0. In this case, all storage cell string blocks containing a selected block are activated, and information of one line portion is set onto each bit line thereof. When RAS is transferred from 'H' to 'L', external (transfer destination) addresses RA1, RA2... are latched, and when the corresponding word line is raised, the information latched onto a pair of bit lines is written by one line at every word line. In this regard, the bit line BL does not return to a precharge state until WE returns to 'H'. According to this constitution, the initial set line information can be transferred to an arbitrary line in all the storage cell strings.
申请公布号 JPS63183695(A) 申请公布日期 1988.07.29
申请号 JP19870014774 申请日期 1987.01.23
申请人 MITSUBISHI ELECTRIC CORP 发明人 HIDAKA HIDETO;KUMANOTANI MASAKI;KONISHI YASUHIRO;DOSAKA KATSUMI;MIYATAKE HIDEJI;YAMAZAKI HIROYUKI;TSUKAMOTO KAZUHIRO;IKEDA ISATO;SHIMODA MASAKI
分类号 G11C11/401;G11C11/34;G11C11/409 主分类号 G11C11/401
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