| 摘要 |
PURPOSE:To obtain a photodiode array which is easily manufactured and has high stability, by forming a diffusion layer on the isolating island side part insulation in a single-crystal substrate and besides forming an insulating film for isolating island bottom part insulation on a bottom part of the substrate. CONSTITUTION:Oxidizing films 3 and 3' are formed on both surfaces of an N type substrate 2, and junction isolated diffusion layers 5 are formed by the use of windows 4 and 4' which are formed on these oxidizing films. Next, an anode region 6 and an electrode formation region 7 for a photodiode are formed inside an island region which is partitioned by the isolated diffusion layer 5. After electrodes 9 and 9' are formed then, a passivation film 10 is formed over the whole surface, and a shading film 11 is formed on this film 10 so that it corresponds to the isolated regions 5. In aforementioned composi tion, an oxidizing film 8' which has been initially formed functions as a film for isolating island bottom part insulation.
|
