| 摘要 |
PURPOSE:To improve reproducibility on manufacturing and to upgrade element performance, by performing crystal growth of semiconductor multilayered films inclusive of a quantum well active layer and using heat treatment to perform internal diffusion of impurities ranging from a high concentration impurity addition layer to the quantum well active layer. CONSTITUTION:A first conductivity clad layer 2 and a high concentration impurity addition layer 3 are formed on a semiconductor substrate 1 and a fixed width of groove is formed to reach the first clad layer 2, and next semiconductor multilayered films 5, 6, and 7 inclusive of a quantum well active layer 5 are formed thereon. Thereafter heat treatment is used to perform impurity diffusion ranging from the high concentration impurity addition region 3 to the active layer 5. The high concentration impurity addition region 3 is not required to be in contact with the active layer and only required to be disposed at a distance where a necessary impurity concentration is available by heat treatment, and this distance may be determined in consideration of controllability for heat treatment.
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