| 摘要 |
PURPOSE:To make the title sensor have a sensitivity to light of long wavelengths, by a method wherein a photo diode, a switching element for reading out the output of the photo diode and a scanning circuit are formed on the main surface of a second conductivity type epitaxial layer. CONSTITUTION:A P-type epitaxial layer 102 is formed on an N-type Si substrate 101. An N-type impurity is partially implanted in the vicinity of the surface of the epitaxial layer 102 and source and drain regions 103 and 104 are formed. An oxide film 105, a gate electrode 106, a lead-out electrode 107, an interlayer insulating film 108 and a passivation film 109 are respectively formed on the epitaxial layer 102. Thereby, a sensitivity to light of long wavelengths is given. |
