| 摘要 |
PURPOSE:To contrive the improvement of the integration degree and breakdown strength, by a method wherein the transfer electrodes of a CCD are formed, being isolated at very narrow intervals on the same plane. CONSTITUTION:A P-type well (a), an N-type impurity layer for a photo diode, isolation and so on are formed in the surface of a semiconductor substrate and thereafter, an Si oxide film 1, a poly Si layer 5 and a nitride film 6 are laminated. Then, poly Si layers 7 of the same form as those of electrodes g1, g3, g5..., each being the nth one (n: an odd number) of 4-phase driving transfer electrodes, are formed and poly oxide films 8 are respectively deposited on the surfaces thereof. A resist layer 9 is deposited and the extents in the same degree as those of the layers 7 are etched away. The films 8 and 7 are etched away using the layer 9 as a mask and the side end parts only of the films 8 are left. The film 6 is etched away using the left times 8 as masks. An oxide film 10 is formed on the exposed surface of the layer 5 and after the film 6 is removed, the layer 5 is etched using the oxide film 10 as a mask. Whereupon, transfer electrodes g1, g2... isolated at narrow intervals can be obtained. |
