| 摘要 |
PURPOSE:To contrive the improvement of the integration degree, breakdown strength property and the simplification of production, by a method wherein the transfer electrodes of a CCD are formed, being isolated at very narrow intervals on the same plane. CONSTITUTION:An N-type impurity layer is formed in a P-type well in the form of matrix and photo diodes Pd11-Pdmn are formed. U-shaped transfer electrodes g1, g3... and inverted U-shaped transfer electrodes g2, g4... are alternately provided on the upper surfaces of charge-transfer channels L1-Ln and the upper surfaces of isolation regions (parts shown by oblique lines). The transfer electrodes g1, g2, g3, g4... are a poly Si film and are formed by a specified production method in such a way that the interval between the adjacent electrodes becomes 0.2mum on the channels L1-Ln. Whereupon, as there is no need to provide an overlapping part on the transfer electrodes, a high integration can be realized and the breakdown strength is also improved. The electrodes g1, g2... are connected with metal wirings a1, a2... formed two by two on each channel through contacts C1, C2... on the isolation regions. |
