| 摘要 |
PURPOSE:To realize an infrared ray detection element with a good S/N ratio, by forming electrodes on positions rich in a mercury component of which a mercury cadmium tellurium.epitaxial crystal layer is formed. CONSTITUTION:An epitaxial layer 2 of mercury cadmium tellurium is formed on a cadmium tellurium substrate 1, and a region A where infrared rays are received in this epitaxial layer 2 is engraved by etching so as to form a recessed part. An insulating layer 3 made of zinc sulfide and electrodes 4 are formed on this recessed part. Since a light-receiving surface is thus formed thin and near to an interface, the electrodes 4 are configured on positions more rich in mercury than the light-receiving surface. Resultingly, a good ohmic contact can be obtained. Therefore, low-frequency noises can be reduced.
|
