| 摘要 |
PURPOSE:To form an oxide-nitride film having uniform composition in a highly efficient manner by a method wherein the mixture of oxygen gas and ammonia gas is introduced into the reaction chamber which is heated up to a high temperature, and an oxide-nitrogen film is formed on the silicon substrate in a reaction chamber. CONSTITUTION:A plurality of wafers 13 set on a wafer boat 12 are introduced into a reaction chamber 10 by opening a cap 14, and the cap 14 is closed. The reaction chamber 10 is heated up to the desired temperature by a heater 20. Oxygen gas and ammonia gas fed from an oxygen gas feeding tube 15 and an ammonia gas feeding tube 16 are introduced into the reaction chamber 10, and the chamber 10 is maintained in this state for the prescribed period. As a result, the density distribution of the oxygen atoms and the nitrogen atoms for the distance from the surface of a wafer 11 can be made almost uniform. Consequently, the oxide-nitride film having uniform composition can be formed in a highly efficient manner.
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