发明名称 CU ALLOYED LEAD FRAME MATERIAL FOR SEMICONDUCTOR DEVICE
摘要 PURPOSE:To produce the titled lead frame material having high strength and having the excellent thermal exfoliation resistance to a solder by preparing a Cu alloy contg. specific ratios of Ni, Sn, Si, Zn and Ca. CONSTITUTION:The Cu alloy contg., by weight, 1-4% Ni, 1-3% Sn, 0.15-0.8% Si, 0.1-1% Zn, 0.002-0.04% Ca and the balance consisting of Cu with inevitable impurities is prepared. Said Cu alloy has high strength of about >=60kg/mm<2> tensile strength, has the excellent thermal exfoliation resistance to solder and is suitable for the Cu alloyed lead frame material for semiconductor device.
申请公布号 JPS63183143(A) 申请公布日期 1988.07.28
申请号 JP19870013080 申请日期 1987.01.22
申请人 MITSUBISHI SHINDO KK 发明人 FUTATSUKA RENSEI;CHIBA SHUNICHI;SAKAKIBARA TADAO
分类号 C22C9/00;C22C9/06;H01L23/48 主分类号 C22C9/00
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