| 摘要 |
PURPOSE:To simplify a process and improve a yield by a method wherein a gate electrode and an island are formed by performing etching in one photoresist process. CONSTITUTION:A Ta film for a gate electrode 11, a non-doped amorphous silicon film for a semiconductor film 14, an N<+> amorphous silicon film for a contact portion 15, and a Mo film for a drain.source electrode 16 are laminated in the order listed on a glass substrate. Next, the Mo film, the N<+> and the non-doped amorphous silicon films, a silicon nitride film, and the Ta film are subjected to dry etching after applying polyimide photoresist to the whole surface and leaving polyimide photoresist on a gate electrode pattern. A process follows, wherein polyimide photoresist is removed and a sidewall insulating film 12 is formed on the sidewall of the gate electrode 11 by performing an anode oxidizing process on the gate electrode 11. Next, a display electrode 17 of a transparent conductive film is formed, a drain.source wiring 18 is accomplished, and a back channel part of the N<+> amorphous film is removed by etching for the formation of the contact part 15. Thus, a TFT is accomplished. |
