| 摘要 |
PURPOSE:To improve the controllability of P-type doping in the growth of a semiconductor by a method wherein the pressure in the cylinder, in which an organic metal compound is housed, is controlled uniformly even when the flow rate of carrier gas is varied in order to change the concentration of the organic metal compound. CONSTITUTION:A mass-flow controller 3, which controls the flow rate of carrier gas used to dilute the mixed gas consisting of the vapor of the organic metal compound 10 flowing out from a cylinder 9 and the carrier gas, and a gas mixing chamber 2 with which the mixed gas flowing out from the cylinder 9 are provided. A pressure controlling system monitors a mass-flow controller 4 and the pressure in the cylinder 9, and the system is composed of the pressure gauge 5, with which the obtained value is outputted as an electric signal, and a control valve 6 with which the pressure in the cylinder 9 is controlled to the prescribed value by receiving said electric signal. As a result, in the growth of a semiconductor thin film, the flow rate of the mixed gas supplied to the growing furnace can be constantly maintained even when the layers of doping quantity and the like of Zn or Mg and the like are continuously grown.
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