发明名称 |
Improved multilayer interconnection for integrated circuit structure having two or more conductive metal layers and method of making same. |
摘要 |
Construction of a novel multilayer conductive interconnection for an integrated circuit having more than one conductive layer is disclosed comprising a lower barrier layer (40) which may be in contact with an underlying silicon substrate (10) and comprising a material selected from the class consisting of TiW and TiN; an intermediate layer (50) of conductive metal such as an aluminum base metal; and an upper barrier layer (60) which may be in contact with a second aluminum base metal layer (80) and which is selected from the class consisting of TiW, TiN, MoSix and TaSi where x equals 2 or more. |
申请公布号 |
EP0276087(A2) |
申请公布日期 |
1988.07.27 |
申请号 |
EP19880300289 |
申请日期 |
1988.01.14 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
SHANKAR, KRISHNA;RAMANI, RAM |
分类号 |
H01L21/60;H01L21/28;H01L21/768;H01L23/522;H01L23/532;H01L29/43 |
主分类号 |
H01L21/60 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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