| 摘要 |
PURPOSE:To measure the heat resistance of a semiconductor device by simple facilities and a simple method by calculating the heat resistance from the difference between the external surface temperature of a semiconductor device and the temperature of a semiconductor element. CONSTITUTION:The sealed semiconductor device is put in high-insulation liquid which has a boiling point between 20 and 100 deg.C and supplied with specific electric power. For example, a power transistor 3 mounted on a package is dipped in a glass container 2 which contains 3l of fluorohydrocarbon with, for example, a 23.8 deg.C boiling point and electric power of 10W is applied by a control system 5 through a lead wire group 4 to measure the heat resistance from the variation value of the base-emitter voltage. This heat resistance is calculated from the applied electric power and variation value.
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