| 摘要 |
<p>In a method for making CMOS devices after formation of a well region in the substrate, the active regions are delimited by using two active region masks, one for the P type regions and one for the N type regions. These two masks are also used to dope the regions of the substrate and of the well where the insulation regions are to be formed. In this manner, instead of three masks, one for the definition of the active regions and two for implanting atoms in the insulation regions, only two masks are sufficient.</p> |
