发明名称 |
A self-aligned field effect transistor including method. |
摘要 |
<p>A self-aligned gate (SAG) transistor or FET is described which transistor overcomes several disadvantages of the prior art for making SAG field-effect transistors. The disadvantages noted above result from the fact that current SAG FET's have a symmetrical structure, with n+ regions on either side of the gate electrode. This invention provides a means of masking off a region on the drain side of the gate electrode before performing an n+ implant, so that the n+ implanted region is asymmetrical on the two sides of the gate electrode. This has the desired beneficial effect of reducing the parasitic source resistance, without the deleterious effects on gate-drain breakdown voltage, gate-drain capacitance, and output resistance that invariably accompany a high doping level on the drain side of the gate. Using this technique, substantially increased performance can be obtain from a self-aligned FET.</p> |
申请公布号 |
EP0275905(A2) |
申请公布日期 |
1988.07.27 |
申请号 |
EP19880100360 |
申请日期 |
1988.01.13 |
申请人 |
INTERNATIONAL STANDARD ELECTRIC CORPORATION |
发明人 |
GRIFFIN, EDWARD LAWRENCE;SADLER, ROBERT ALLAN;GEISSBERGER, ARTHUR EUGENE |
分类号 |
H01L21/338;H01L29/10;H01L29/423;H01L29/812 |
主分类号 |
H01L21/338 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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