Vapor phase epitaxial growth of iron-doped, indium-based, compound group III-V semiconductors.

摘要

An iron-doped, indium-based, III-V semiconductor region (20) is deposited on a substrate (22) from a precursor gas which comprises an inert gas such as nitrogen, a volatile dopant compound such as FeCl2 a volatile indium compound such as InCl and a group V hydride such as phosphine. The concentration of hydrogen in the precursor gas is limited to prevent excessive precipitation of iron. It has been found to be possible to produce InP regions with a resistivity in excess of 10<8> OMEGA -cm.