| 摘要 |
An activatable conductive link structure in a semiconductor device, the structure comprising in its non-activated, non-conductive, configuration, a void (10; 13; 17) in an insulating layer (9; 12; 15) of the semiconductor device across which void conductive parts (8, 11; 14a, 14b; 18, 16) of the device confront one another, such that upon activation of the link conductive material of at least one of the confronting conductive parts melts and fills the void to establish a conductive link between the conductive parts. The activation is effected simply by local heating with a laser beam pulse. |
