| 摘要 |
PURPOSE:To prevent generation of polycrystal or twin and to cause growth of the title (large sized) single crystal stably at high yield by fixing mechanically to a boat a seed crystal mounted on a mounting bed for the seed crystal in the boat. CONSTITUTION:An element 7 of the group III of the periodic table (e.g. Ga) is charge in to a boat 5 of an apparatus fro producing a single crystal using a boat, and a seed crystal 6 mounted on a mounting bed 5a for the seed crystal is fixed mechanically to the boat 5 by binding, for example, with carbon yarn 10. Then, the boat 5 is introduced into one side of a quartz sealing tube 4 in such a manner that the seed crystal 6 comes to the middle part of the sealing tube 4 of the apparatus, and, on one hand, an element 8 (e.g. As) of the group V of the periodic table is arranged to the inside of a furnace core tube 3 of a heating furnace after sealing it in another side of the sealing tube under vacuum. The boat 5 is then heated in a synthesizing furnace 2 at, for example, 1,238 deg.C, and As 8 is heated on one hand at, for example, 615-620 deg.C in a vapor pressure furnace 1 to form Ga-As-melt 7', then the heating zone is shifted to the left side. Thus, synthetic Ga-As single crystal is stably grown while preventing the seed crystal 6 from being lifted by the melt 7' at the boundary between solid and liquid.
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