| 摘要 |
PURPOSE:To synthesize diamond at a high rate by injecting a high-frequency wave or a microwave into the inorg. gas contg. hydrocarbons and an atom to cause a plasma reaction. CONSTITUTION:The substrate 6 of a silicon wafer, etc., is arranged in a plasma reaction tube 4, and the tube is evacuated by a vacuum pump 10. The inorg. gas 2 contg. hydrocarbons 1 and an oxygen atom is passed through a mass flowmeter 3 to control the ratio (C/O) of the gas flow rate, and supplied to the reaction tube. The plasma of the gaseous mixture is produced by a microwave oscillator 7. The inorg. gas contg. an oxygen atom is decomposed in the plasma 7, and an oxygen radical is formed. The hydrocarbons are decomposed by the dehydrogenation reaction due to the radical or the electron having high energy in the plasma, and diamond, graphite, amorphous carbon, etc., are deposited on the silicon wafer 6 heated at several hundreds degree Celcius by a heater 9. The deposite other than diamond are allowed to react with the oxygen radical and OH radical and removed, and diamond is selectively formed on the silicon wafer. |
