| 摘要 |
PURPOSE:To assure a shallow bonding accompanied by no damage due to ion implantation by a method wherein, after forming a gate electrode on a substrate through the intermediary of a gate insulating film, a semiconductor layer is formed on both sidewall parts of the gate electrode through the intermediary of another insulating film and then the overall surface is implanted with ion. CONSTITUTION:Oxide film isolating parts 2 are formed on a p-type silicon substrate 1 while a gate film 3 and a gate electrode 4 are successively formed. First, an oxide film 10 is deposited to be left only on the gate sidewall parts by RIE anisotropical etching process. Second, a polycrystalline silicon film 11 is deposited and RIE isotropically etched to be left on the gate sidewall parts and then removed excluding source.drain regions using a photoresist 12. Third, after removing the photoresist 12. As is ion-implanted to form source.drain regions 5a, 5b and then As of polycrystalline silicon 11 is diffused in a P type substrate 1 to form thinly bonded source.drain regions 5a, 5b. Finally, an insulating film 6 is formed to make contact holes in the specified positions forming Al wirings 7.
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