| 摘要 |
PURPOSE:To make one mask for pattern formation unnecessary and to easily pattern a fuse by a method wherein a barrier metal for pattern formation of a wiring metal and the fuse for connection of wiring metal are coated with titanium nitride (TiN) simultaneously. CONSTITUTION:When a wiring metal is to be formed by diffusion, a barrier layer, which is used to prevent this metal from being diffused into a semiconductor, and a fuse are coated with titanium nitride during an identical process; after that, the wiring metal is formed by diffusion. The material for the fuse is titanium nitride (TiN), and this material can be formed easily by a reactive sputtering process of Ti where nitrogen gas (N2) is introduced into an atmosphere of argon gas (Ar). The wiring metal 1 is formed by diffusion by using a barrier metal which is patterned and formed simultaneously with the fuse 2. Because the fuse is patterned simultaneously with the barrier metal for pattern formation of the wiring metal, it is possible to make one mask for pattern formation unnecessary as compared with the case where an NiCr fuse or a PtSi fuse is used.
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