| 摘要 |
PURPOSE:To cause vacuum ultraviolet radiation obtained by ECR plasma to be absorbed by introduced gases to excite the same without using any light-transmitting window and to enable a substrate to be surface treated with these gases, by utilizing electron cyclotron resonance (ECR) plasma as a source of vacuum ultraviolet radiation while arranging the substrate and a gas inlet port within the same vessel as the ECR plasma. CONSTITUTION:Microwaves and magnetic field having magnetic strength corresponding to or over ECR conditions are applied by magnetic field coils 4 to the inside of an apparatus 1. A second gas inlet port 8 and a substrate 3 are arranged within the same vessel of the apparatus 1 in which plasma of ECR discharge is created. Hydrogen gas is introduced through a first gas inlet port 2, ECR discharge is caused to occur and the pressure of the hydrogen gas is adjusted to 10<-6>-10<-4> torr, so that sufficient vacuum ultraviolet radiation is obtained. While such vacuum ultraviolet radiation is utilized, heavy hydrogen gas is used as a first gas and monosilane gas containing hydrogen is used as a second gas, for example. The pressure of the heavy hydrogen gas is adjusted to 5X10<-5> torr, the pressure of the monosilane gas is adjusted to 2X10<-4> torr and the power of the microwaves is adjusted to 200 W. Thereby, an amorphous silicon film can be formed on the substrate 3 without heating the substrate.
|
