| 摘要 |
PURPOSE:To miniaturize an element, i.e. a trench, without increasing the contact resistance by a method wherein a substrate in the contact part is moderately etched away to increase the effective contact space. CONSTITUTION:The effective space of a contact 7 is increased by means of etching the contact 7 in a trench part diffused region. For example, the semiconductor substrate on the contact part 7 in the trench part diffused region is anisotropically or isotropically etched away by 0.2mum. Through these procedures, when the effective space of contact 7 in the trench part diffused region is increased, any contact resistance causes no trouble even if the element is scaled.
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